EasyGaN is a startup providing epitaxy solutions to unleash the full potential of GaN-on-Silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using Molecular Beam Epitaxy (MBE). Our first product is a very thin high-quality Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as ideal starting point for their GaN epitaxy. In addition, we are currently developing an ultra-thin GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave device market.